|
|
LPCVD Si3N4 (Stoichiometric)

|
|
Applications
|
- High contrast waveguides - CMOS
|
|
Properties (indication)
|
Refractive Index
|
2.01xx
|
|
Reproducibility of RI
|
5 x 10-4
|
|
Uniformity of RI
|
2-5 x 10-4
|
|
Optical loss (632.8 nm)
|
< 0.2 dB/cm
|
|
Optical loss (IR)
|
< 0.1 dB/cm
|
|
Max thickness |
> 300 nm
|
|
Thickness uniformity
|
1,5 - 2 %
|
|
Thickness reproducibility |
1%
|
|